inchange semiconductor isc product specification isc silicon npn power transistor MJ21194 description t otal harmonic distortion characterized high dc current gain high area of safe operation applications designed for high power audio outpu t, disk head positioners and linear applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-emitter voltage 400 v v ceo collector-emitter voltage 250 v v ebo emitter-base voltage 5 v i c collector current-continuous 16 a i cm collector current-pulsed 30 a i b b base current-continuous 5 a p d total power dissipation (t c =25 ) 250 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermalresistance junction to case 0.7 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJ21194 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 b 250 v v ce (sat)-1 collector-emitter saturation voltage i c =8a ;i b =0.8a b 1.4 v v ce (sat)-2 collector-emitter saturation voltage i c =16a ;i b =3.2a 4 v v be (on) base-emitter on voltage i c =8a ; v ce =5v 2.2 v i ceo collector cutoff current v ce =200v,i b =0 0.1 ma i cex collector cutoff current v ce =250v; v be(off) =1.5v 0.1 ma i ebo emitter cutoff current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =8a; v ce =5v 25 75 h fe-2 dc current gain i c =16a; v ce =5v 8 c ob collector capacitance i e = 0; f=1mhz ; v cb =-10v 500 pf f t current gain-bandwidth product i c =1a ;v ce = 10v; f test =1mhz 4 mhz isc website www.iscsemi.cn 2
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